References
Abidi, A.A. (2004) ‘RF CMOS comes of age’, IEEE Journal of Solid-State Circuits, 39(4), pp. 549–561. Available at: https://doi.org/10.1109/JSSC.2004.825247. Ahmeda, K., Ubochi, B., Benbakhti, B., Duffy, S.J., Soltani, A., Zhang, W.D. and Kalna, K. (2017) ‘Role of self-heating and polarization in AlGaN/GaN-based heterostructures’, IEEE Access, 5, pp. 20946–20952. Available at: https://doi.org/10.1109/ACCESS.2017.2755984. Ajayi, A.A., Alabi, A.B., Abodunrin, O.W. and Musiliyu, K.A. (2021) ‘Structural and optical characterization of chemically synthesized nanostructured zinc oxide thin film’, ABUAD International Journal of Natural and Applied Sciences, 1(1), pp. 18–23. Available at: https://doi.org/10.53982/aijnas.2021.0101.03-j. Akanbi, O., Ganiu, O.S. and Sunday, E.A. (2022a) ‘Comprehensive review of statistical process control for precision weight management in global food manufacturing’, Gyanshauryam: International Scientific Refereed Research Journal, 5(3), pp. 433–461. Available at: https://gisrrj.com/paper/GISRRJ225387.pdf. No article-specific DOI could be confirmed. Akanbi, O., Ganiu, O.S. and Sunday, E.A. (2022b) ‘A workforce-centric line-balancing model for throughput maximization in multi-shift operations’, Shodhshauryam: International Scientific Refereed Research Journal, 5(3), pp. 439–464. Available at: https://doi.org/10.32628/SHISRRJ. This is the journal-level DOI prefix; an article- specific DOI suffix could not be confirmed. Akwuruoha, C.N. and Hu, Z. (2018) ‘High-power broadband graphene non-Foster circuit enabled class-J GaN HEMT power amplifier’, Microwave and Optical Technology Letters, 60(12), pp. 3088–3094. Available at: https://doi.org/10.1002/mop.31427. Alsharif, M.H., Kelechi, A.H., Albreem, M.A., Chaudhry, S.A., Zia, M.S. and Kim, S. (2020) ‘Sixth generation (6G) wireless networks: Vision, research activities, challenges and potential solutions’, Symmetry, 12(4), article 676. Available at: https://doi.org/10.3390/sym12040676. Ambacher, O., Foutz, B., Smart, J., Shealy, J.R., Weimann, N.G., Chu, K., Murphy, M., Sierakowski, A.J., Schaff, W.J., Eastman, L.F., Dimitrov, R., Mitchell, A. and Stutzmann, M. (2000) ‘Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures’, Journal of Applied Physics, 87(1), pp. 334–344. Available at: https://doi.org/10.1063/1.371866. Ammaih, Y., Lfakir, A., Hartiti, B., Ridah, A., Thevenin, P. and Siadat, M. (2013) ‘Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications’, Optical and Quantum Electronics, 46(1), pp. 229–234. Available at: https://doi.org/10.1007/s11082-013-9757-2. Andrews, J.G., Buzzi, S., Choi, W., Hanly, S.V., Lozano, A., Soong, A.C.K. and Zhang, J.C. (2014) ‘What will 5G be?’, IEEE Journal on Selected Areas in Communications, 32(6), pp. 1065–1082. Available at: https://doi.org/10.1109/JSAC.2014.2328098. Aredo, S.C., Negash, Y., Marye, Y.W., Kassa, H.B., Kornegay, K.T. and Diba, F.D. (2022) ‘Hardware-efficient massive MIMO systems with optimal antenna selection’, Sensors, 22(5), article 1743. Available at: https://doi.org/10.3390/s22051743. Auret, F.D., Meyer, W.E., Diale, M., Janse van Rensburg, P.J., Song, S.F., Temst, K. and Vantomme, A. (2011) ‘Electrical characterization of metastable defects introduced in GaN by Eu-ion implantation’, Materials Science Forum, 679–680, pp. 804–807. Available at: https://doi.org/10.4028/www.scientific.net/MSF.679-680.804. Baliga, B.J. (1989) ‘Power semiconductor device figure of merit for high-frequency applications’, IEEE Electron Device Letters, 10(10), pp. 455–457. Available at: https://doi.org/10.1109/55.43098. Biswas, A., Xu, M., Fu, K., Zhou, J., Xu, R., Puthirath, A.B., Hachtel, J.A., Li, C., Iyengar, S.A., Kannan, H., Zhang, X., Gray, T., Vajtai, R., Birdwell, A.G., Neupane, M.R., Ruzmetov, D.A., Shah, P.B., Ivanov, T., Zhu, H., Zhao, Y. and Ajayan, P.M. (2022) ‘Properties and device performance of BN thin films grown on GaN by pulsed laser deposition’, Applied Physics Letters, 121(9), article 092105. Available at: https://doi.org/10.1063/5.0092356. Boccardi, F., Heath, R.W., Lozano, A., Marzetta, T.L. and Popovski, P. (2014) ‘Five disruptive technology directions for 5G’, IEEE Communications Magazine, 52(2), pp. 74–80. Available at: https://doi.org/10.1109/MCOM.2014.6736746. Božanić, M. and Sinha, S. (2021) ‘Device technologies and circuits for 5G and 6G’, in Mobile Communication Networks: 5G and a Vision of 6G. Cham: Springer, pp. 99–154. Available at: https://doi.org/10.1007/978-3-030-69273-5_4. Burk, A.A., O’Loughlin, M.J., Siergiej, R.R., Agarwal, A.K., Sriram, S., Clarke, R.C., MacMillan, M.F., Balakrishna, V. and Brandt, C.D. (1999) ‘SiC and GaN wide bandgap semiconductor materials and devices’, Solid-State Electronics, 43(8), pp. 1459–1464. Available at: https://doi.org/10.1016/S0038-1101(99)00089-1. Camarchia, V., Pirola, M., Quaglia, R., Jee, S., Cho, Y. and Kim, B. (2015) ‘The Doherty power amplifier: Review of recent solutions and trends’, IEEE Transactions on Microwave Theory and Techniques, 63(2), pp. 559–571. Available at: https://doi.org/10.1109/TMTT.2014.2387061. Chataut, R. and Akl, R. (2020) ‘Massive MIMO systems for 5G and beyond networks: Overview, recent trends, challenges, and future research direction’, Sensors, 20(10), article 2753. Available at: https://doi.org/10.3390/s20102753. Chiang, C.-Y., Hsu, H.-T. and Chang, E.Y. (2012) ‘Effect of field plate on the RF performance of AlGaN/GaN HEMT devices’, Physics Procedia, 25, pp. 86–91. Available at: https://doi.org/10.1016/j.phpro.2012.03.054. Chowdhury, M.Z., Shahjalal, M., Ahmed, S. and Jang, Y.M. (2020) ‘6G wireless communication systems: Applications, requirements, technologies, challenges, and research directions’, IEEE Open Journal of the Communications Society, 1, pp. 957–975. Available at: https://doi.org/10.1109/OJCOMS.2020.3010270. del Alamo, J.A. (2011) ‘Nanometre-scale electronics with III–V compound semiconductors’, Nature, 479(7373), pp. 317–323. Available at: https://doi.org/10.1038/nature10677. du Preez, J. and Sinha, S. (2022) ‘Evolution of millimeter-wave silicon technology’, in du Preez, J. and Sinha, S. (eds.) State-of-the-Art of Millimeter-Wave Silicon Technology. Cham: Springer, pp. 1–15. Available at: https://doi.org/10.1007/978-3-031-14655-8_1. Eleruja, M.A., Adedeji, A.V., Egharevba, G.O., Lambi, J.N., Akanni, M.S., Jeynes, C. and Ajayi, E.O.B. (2002) ‘Preparation and characterization of undoped zinc oxide and uranium- doped zinc oxide thin films’, Optical Materials, 20(2), pp. 119–123. Available at: https://doi.org/10.1016/S0925-3467(02)00057-5. Elkhaldi, S., El Bakkali, M., Moubadir, M., Aghoutane, M., Touhami, N.A. and Elhamadi, T.-E. (2020) ‘Design and electromagnetic simulation of a 40 dBm Class-AB GaN power amplifier’, in 2020 International Symposium on Advanced Electrical and Communication Technologies. IEEE, pp. 1–5. Available at: https://doi.org/10.1109/ISAECT50560.2020.9523639. Galazka, Z. (2018) ‘β-Ga2O3 for wide-bandgap electronics and optoelectronics’, Semiconductor Science and Technology, 33(11), article 113001. Available at: https://doi.org/10.1088/1361-6641/aadf78. Ganose, A.M., Scanlon, D.O., Walsh, A. and Hoye, R.L.Z. (2022) ‘The defect challenge of wide- bandgap semiconductors for photovoltaics and beyond’, Nature Communications, 13, article 4715. Available at: https://doi.org/10.1038/s41467-022-32131-4. Gasmi, F.Z., Chemam, R., Graine, R., Boubir, B. and Meradji, H. (2020) ‘Structural, electronic, and optical properties of the gallium nitride semiconductor by means of the FP-LAPW method’, Journal of Molecular Modeling, 26(12), article 356. Available at: https://doi.org/10.1007/s00894-020-04614-y. Gedel, I.A. and Nwulu, N. (2021) ‘Infrastructure sharing for 5G deployment: A techno-economic analysis’, International Journal of Interactive Mobile Technologies, 15(2), pp. 137–156. Available at: https://doi.org/10.3991/ijim.v15i02.16749. Higashiwaki, M., Sasaki, K., Kuramata, A., Masui, T. and Yamakoshi, S. (2012) ‘Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates’, Applied Physics Letters, 100(1), article 013504. Available at: https://doi.org/10.1063/1.3674287. Hwang, J.-H., Lee, J., Kim, K.-J. and Lee, H.L. (2022) ‘A millimeter-wave GaN MMIC front end module with 5G NR performance verification’, Journal of Electromagnetic Engineering and Science, 22(6), pp. 638–646. Available at: https://doi.org/10.26866/jees.2022.6.r.133. Imoize, A.L., Adedeji, O., Tandiya, N. and Shetty, S. (2021) ‘6G enabled smart infrastructure for sustainable society: Opportunities, challenges, and research roadmap’, Sensors, 21(5), article 1709. Available at: https://doi.org/10.3390/s21051709. Imoize, A.L., Obakhena, H.I., Anyasi, F.I. and Sur, S.N. (2022) ‘A review of energy efficiency and power control schemes in ultra-dense cell-free massive MIMO systems for sustainable 6G wireless communication’, Sustainability, 14(17), article 11100. Available at: https://doi.org/10.3390/su141711100. Isberg, J., Hammersberg, J., Johansson, E., Wikström, T., Twitchen, D.J., Whitehead, A.J., Coe, S.E. and Scarsbrook, G.A. (2002) ‘High carrier mobility in single-crystal plasma- deposited diamond’, Science, 297(5587), pp. 1670–1672. Available at: https://doi.org/10.1126/science.1074374. Islam, N., Mohamed, M.F.P., Khan, M.F.A.J., Falina, S., Kawarada, H. and Syamsul, M. (2022) ‘Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review’, Crystals, 12(11), article 1581. Available at: https://doi.org/10.3390/cryst12111581. Itas, Y.S., Suleiman, A.B., Ndikilar, C.E., Lawal, A., Razali, R., Khandaker, M.U., Ahmad, P., Tamam, N. and Sulieman, A. (2022) ‘The exchange-correlation effects on the electronic bands of hybrid armchair single-walled carbon boron nitride nanostructure’, Crystals, 12(3), article 394. Available at: https://doi.org/10.3390/cryst12030394. Jia, H., Dong, M., Wang, X., Zhu, S. and Yang, Y. (2021) ‘A novel 4H-SiC MESFET with a heavily doped region, a lightly doped region and an insulated region’, Micromachines, 12(5), article 488. Available at: https://doi.org/10.3390/mi12050488. Kaminski, N. and Hilt, O. (2014) ‘SiC and GaN devices—wide bandgap is not all the same’, IET Circuits, Devices & Systems, 8(3), pp. 227–236. Available at: https://doi.org/10.1049/iet- cds.2013.0223. Kaplar, R.K., Baca, A.G., Douglas, E.A., Klein, B.A., Allerman, A.A., Crawford, M.H. and Reza, S.R. (2021) ‘High-Al-content heterostructures and devices’, Semiconductors and Semimetals, 107, pp. 191–222. Available at: https://doi.org/10.1016/bs.semsem.2021.05.001. Kasu, M. (2010) ‘Diamond field-effect transistors as microwave power amplifiers’, NTT Technical Review, 8(8), pp. 12–16. Available at: https://doi.org/10.53829/ntr201008sf3. Khediri, A., Talbi, A., Jaouad, A., Maher, H. and Soltani, A. (2021) ‘Impact of III-nitride/Si interface preconditioning on breakdown voltage in GaN-on-silicon HEMT’, Micromachines, 12(11), article 1284. Available at: https://doi.org/10.3390/mi12111284. Kim, M., Seo, J.H., Singisetti, U. and Ma, Z. (2017) ‘Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β- Ga2O3, and diamond’, Journal of Materials Chemistry C, 5(33), pp. 8338–8354. Available at: https://doi.org/10.1039/C7TC02221B. Kuchta, D., Gryglewski, D. and Wojtasiak, W. (2020) ‘A GaN HEMT amplifier design for phased array radars and 5G new radios’, Micromachines, 11(4), article 398. Available at: https://doi.org/10.3390/mi11040398. Lin, Q., Wu, H., Chen, Y., Hu, L., Chen, S. and Zhang, X. (2020) ‘A compact ultra-broadband GaN MMIC T/R front-end module’, in 2020 IEEE/MTT-S International Microwave Symposium. IEEE, pp. 1231–1234. Available at: https://doi.org/10.1109/IMS30576.2020.9223795. Litchfield, M. and Dugas, D. (2021) ‘10 W and 30 W, 32–37 GHz, Ka-band GaN MMIC power amplifiers on SiC’, in 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium. IEEE. Available at: https://doi.org/10.1109/BCICTS50416.2021.9682477. Liu, A.C., Tu, P.T., Langpoklakpam, C., Huang, Y.W., Chang, Y.T., Tzou, A.J., Hsu, L.H., Lin, C.H., Kuo, H.C. and Chang, E.Y. (2021) ‘The evolution of manufacturing technology for GaN electronic devices’, Micromachines, 12(7), article 737. Available at: https://doi.org/10.3390/mi12070737. Martinez, M., King, M.P., Baca, A.G., Allerman, A.A., Armstrong, A.A., Klein, B.A., Douglas, E.A., Kaplar, R.J. and Swanson, S.E. (2019) ‘Radiation response of AlGaN-channel HEMTs’, IEEE Transactions on Nuclear Science, 66(1), pp. 344–351. Available at: https://doi.org/10.1109/TNS.2018.2885526. Mayeda, J., Lie, D.Y.C. and Lopez, J. (2022) ‘Broadband millimeter-wave 5G power amplifier design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT’, Electronics, 11(5), article 683. Available at: https://doi.org/10.3390/electronics11050683. Mendes, J.C., Liehr, M. and Li, C. (2022) ‘Diamond/GaN HEMTs: Where from and where to?’, Materials, 15(2), article 415. Available at: https://doi.org/10.3390/ma15020415. Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M. and Zanoni, E. (2008) ‘Reliability of GaN high-electron-mobility transistors: State of the art and perspectives’, IEEE Transactions on Device and Materials Reliability, 8(2), pp. 332–343. Available at: https://doi.org/10.1109/TDMR.2008.923743. Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A. and Rebollo, J. (2014) ‘A survey of wide bandgap power semiconductor devices’, IEEE Transactions on Power Electronics, 29(5), pp. 2155–2163. Available at: https://doi.org/10.1109/TPEL.2013.2268900. Mimura, T. (2002) ‘The early history of the high electron mobility transistor’, IEEE Transactions on Microwave Theory and Techniques, 50(3), pp. 780–782. Available at: https://doi.org/10.1109/22.989961. Mishra, U.K., Parikh, P. and Wu, Y.F. (2002) ‘AlGaN/GaN HEMTs—An overview of device operation and applications’, Proceedings of the IEEE, 90(6), pp. 1022–1031. Available at: https://doi.org/10.1109/JPROC.2002.1021567. Mishra, U.K., Shen, L., Kazior, T.E. and Wu, Y.-F. (2008) ‘GaN-based RF power devices and amplifiers’, Proceedings of the IEEE, 96(2), pp. 287–305. Available at: https://doi.org/10.1109/JPROC.2007.911060. Moon, S., Chang, S.-J., Kim, Y., Okello, O.F.N., Kim, J., Kim, J., Jung, H.-W., Ahn, H.-K., Kim, D.-S., Choi, S.-Y., Lee, J., Lim, J.-W. and Kim, J.K. (2021) ‘Van der Waals heterostructure of hexagonal boron nitride with an AlGaN/GaN epitaxial wafer for high- performance radio frequency applications’, ACS Applied Materials & Interfaces, 13(49), pp. 59440–59449. Available at: https://doi.org/10.1021/acsami.1c15970. Moore, K. and Trew, R.J. (1997) ‘Radio-frequency power transistors based on 6H- and 4H-SiC’, MRS Bulletin, 22(3), pp. 50–56. Available at: https://doi.org/10.1557/S0883769400032760. Morkoç, H., Cingolani, R., Lambrecht, W., Gil, B., Jiang, H.-X., Lin, J., Pavlidis, D. and Shenai, K. (1999) ‘Material properties of GaN in the context of electron devices’, MRS Internet Journal of Nitride Semiconductor Research, 4(S1), pp. 18–26. Available at: https://doi.org/10.1557/S1092578300002209. Moultif, N., Duguay, S., Latry, O., Ndiaye, M. and Joubert, E. (2021) ‘Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating’, Microelectronics Reliability, 126, article 114295. Available at: https://doi.org/10.1016/j.microrel.2021.114295. Munthali, K.V., Theron, C., Auret, F.D., Coelho, S.M.M., Njoroge, E. and Prinsloo, L. (2014) ‘Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes’, Materials Science and Engineering: B, 181, pp. 9–15. Available at: https://doi.org/10.1016/j.mseb.2013.11.002. Neudeck, P.G., Okojie, R.S. and Chen, L.-Y. (2002) ‘High-temperature electronics—A role for wide bandgap semiconductors?’, Proceedings of the IEEE, 90(6), pp. 1065–1076. Available at: https://doi.org/10.1109/JPROC.2002.1021571. Nikandish, G., Staszewski, R.B. and Zhu, A. (2019) ‘Design of highly linear broadband continuous-mode GaN MMIC power amplifiers for 5G’, IEEE Access, 7, pp. 57138– 57150. Available at: https://doi.org/10.1109/ACCESS.2019.2914563. Olutimehin, A.O. and Ganiu, O.S. (2022) ‘Integrating Lean Six Sigma with reliability-centered maintenance: A unified framework for manufacturing excellence’, International Journal of Multidisciplinary Research and Growth Evaluation, 3(6), pp. 983–996. Available at: https://doi.org/10.54660/.IJMRGE.2022.3.6.983-996. Omotoso, E., Meyer, W.E., Auret, F.D., Diale, M. and Ngoepe, P.N.M. (2016) ‘Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences’, Physica B: Condensed Matter, 480, pp. 196–200. Available at: https://doi.org/10.1016/j.physb.2015.08.014. Omotoso, E., Meyer, W.E., Auret, F.D., Paradzah, A.T., Diale, M., Coelho, S.M.M. and Janse van Rensburg, P.J. (2015) ‘The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes’, Materials Science in Semiconductor Processing, 39, pp. 112–118. Available at: https://doi.org/10.1016/j.mssp.2015.04.031. Paidi, V., Xie, S., Coffie, R., Moran, B., Heikman, S., Keller, S., Chini, A., DenBaars, S., Mishra, U., Long, S. and Rodwell, M. (2003) ‘High linearity and high efficiency of Class-B power amplifiers in GaN HEMT technology’, IEEE Transactions on Microwave Theory and Techniques, 51(2), pp. 643–652. Available at: https://doi.org/10.1109/TMTT.2002.807682. Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S.P., Speck, J.S. and Mishra, U.K. (2005) ‘High-power AlGaN/GaN HEMTs for Ka-band applications’, IEEE Electron Device Letters, 26(11), pp. 781–783. Available at: https://doi.org/10.1109/LED.2005.857701. Pearton, S.J., Ren, F., Tadjer, M. and Kim, J. (2018) ‘Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETs’, Journal of Applied Physics, 124(22), article 220901. Available at: https://doi.org/10.1063/1.5062841. Raab, F.H., Asbeck, P.M., Cripps, S.C., Kenington, P.B., Popović, Z.B., Pothecary, N., Sevic, J.F. and Sokal, N.O. (2002) ‘Power amplifiers and transmitters for RF and microwave’, IEEE Transactions on Microwave Theory and Techniques, 50(3), pp. 814–826. Available at: https://doi.org/10.1109/22.989965. Rao, M.H.L. and Murty, N.V.L.N. (2015) ‘An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects’, Journal of Semiconductors, 36(1), article 014004. Available at: https://doi.org/10.1088/1674-4926/36/1/014004. Rappaport, T.S., Sun, S., Mayzus, R., Zhao, H., Azar, Y., Wang, K., Wong, G.N., Schulz, J.K., Samimi, M. and Gutierrez, F. (2013) ‘Millimeter wave mobile communications for 5G cellular: It will work!’, IEEE Access, 1, pp. 335–349. Available at: https://doi.org/10.1109/ACCESS.2013.2260813. Roccaforte, F., Fiorenza, P., Greco, G., Lo Nigro, R., Giannazzo, F., Patti, A. and Saggio, M. (2014) ‘Challenges for energy-efficient wide-bandgap semiconductor power devices’, Physica Status Solidi (a), 211(9), pp. 2063–2071. Available at: https://doi.org/10.1002/pssa.201300558. Shafi, M., Molisch, A.F., Smith, P.J., Haustein, T., Zhu, P., De Silva, P., Tufvesson, F., Benjebbour, A. and Wunder, G. (2017) ‘5G: A tutorial overview of standards, trials, challenges, deployment, and practice’, IEEE Journal on Selected Areas in Communications, 35(6), pp. 1201–1221. Available at: https://doi.org/10.1109/JSAC.2017.2692307. Song, K., Chai, C., Yang, Y., Jia, H., Zhang, X. and Chen, B. (2011) ‘Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models’, Journal of Semiconductors, 32(7), article 074003. Available at: https://doi.org/10.1088/1674-4926/32/7/074003. Sunday, E.A. and Omoegun, G.O. (2018) ‘Integrating solar power solutions in small-scale manufacturing industries in Nigeria’, International Journal of Scientific Research in Science, Engineering and Technology, 4(8), pp. 832–853. Available at: https://doi.org/10.32628/IJSRSET23102175. Sunday, E.A. and Omoegun, G.O. (2019) ‘Optimizing electrical load distribution for hybrid solar installations in developing economies’, International Journal of Scientific Research in Mechanical and Materials Engineering, 3(6), pp. 27–47. Journal DOI prefix available at: https://doi.org/10.32628/IJSRMME. Sunday, E.A. and Omoegun, G.O. (2022a) ‘Automation of process control systems using Siemens TIA Portal: A case study approach’, International Journal of Scientific Research in Mechanical and Materials Engineering, 6(5), pp. 30–55. Sunday, E.A. and Omoegun, G.O. (2022b) ‘Smart fault detection in HVAC systems using sensor-based monitoring’, International Journal of Scientific Research in Science, Engineering and Technology, 7(4), pp. 380–403. Available at: https://doi.org/10.32628/IJSRSET229473. Sunday, E.A., Omoegun, G.O., Essien, M.A. and Oluokun, O.A. (2019) ‘Thermodynamic efficiency and control strategies in residential air conditioning systems’, International Journal of Scientific Research in Civil Engineering, 3(3), pp. 52–76. Available at: https://doi.org/10.32628/IJSRCE19339. Sunday, E.A., Omoegun, G.O., Essien, M.A. and Oluokun, O.A. (2020) ‘Transitioning from reactive to predictive maintenance in mechanical systems’, International Journal of Scientific Research in Computer Science, Engineering and Information Technology, 6(6), pp. 425–447. Available at: publisher article record. Tarauni, Y., Shehu, Y., Auwal, M. and Rakiya, A. (2019) ‘Optimization of insulated HfO2 dielectrics of GaN/InN/GaN/In0.1Ga0.9N enhancement-mode MIS-HEMT heterostructure for high-frequency power-amplifier applications’, Nigerian Journal of Technology, 38(2), pp. 503–511. Available at: https://doi.org/10.4314/njt.v38i2.29. Tataria, H., Shafi, M., Molisch, A.F., Dohler, M., Sjöland, H. and Tufvesson, F. (2021) ‘6G wireless systems: Vision, requirements, challenges, insights, and opportunities’, Proceedings of the IEEE, 109(7), pp. 1166–1199. Available at: https://doi.org/10.1109/JPROC.2021.3061701. Vetury, R., Zhang, N.Q., Keller, S. and Mishra, U.K. (2001) ‘The impact of surface states on the DC and RF characteristics of AlGaN/GaNHFETs’, IEEE Transactions on Electron Devices, 48(3), pp. 560–566. Available at: https://doi.org/10.1109/16.906451. Vilas Bôas, A.C., de Melo, M.A.A., Santos, R.B.B., Giacomini, R., Medina, N.H., Seixas, L.E., Finco, S., Palomo, F.R., Romero-Maestre, A. and Guazzelli, M.A. (2021) ‘Ionizing radiation hardness tests of GaN HEMTs for harsh environments’, Microelectronics Reliability, 116, article 114000. Available at: https://doi.org/10.1016/j.microrel.2020.114000. Wang, Z., Wang, G., Liu, X., Wang, S., Wang, T., Zhang, S., Yu, J., Zhao, G. and Zhang, L. (2021) ‘Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: Properties, fabrication and applications’, Journal of Materials Chemistry C, 9(48), pp. 17201–17232. Available at: https://doi.org/10.1039/D1TC04022G. Watanabe, A.O., Ali, M., Sayeed, S.Y.B., Tummala, R.R. and Pulugurtha, M.R. (2021) ‘A review of 5G front-end systems package integration’, IEEE Transactions on Components, Packaging and Manufacturing Technology, 11(1), pp. 118–133. Available at: https://doi.org/10.1109/TCPMT.2020.3041412. Woods-Robinson, R., Han, Y., Zhang, H., Ablekim, T., Khan, I., Persson, K.A. and Zakutayev, A. (2020) ‘Wide band gap chalcogenide semiconductors’, Chemical Reviews, 120(9), pp. 4007–4055. Available at: https://doi.org/10.1021/acs.chemrev.9b00600. Xu, M., Wang, D., Fu, K., Mudiyanselage, D.H., Fu, H. and Zhao, Y. (2022) ‘A review of ultrawide bandgap materials: Properties, synthesis and devices’, Oxford Open Materials Science, 2(1), article itac004. Available at: https://doi.org/10.1093/oxfmat/itac004.